Doping in semiconductors with variable activation energy
نویسندگان
چکیده
A concept of doping that permits for the first time the freedom to design the desired activation energy of a dopant in a semiconductor is introduced and demonstrated. This doping engineering (DE) may also offer the possibility of achieving dopings in semiconductors in which a normally employed doping process is not successful, such as in wide band-gap IIVI semiconductors. Experimentally, we demonstrated that the normal activation energy, 19-25 meV of berrylium (Be) in GaAs was reduced to 4 meV in DE GaAs/S-Ala,Ga,,,As( Be) sample.
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تاریخ انتشار 1999